Direct observation of 0.57eV trap-related RF output power...

Solid-State Electronics 2013 / 2 Vol. 80

Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.
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Volume:
80
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2012.09.010
Date:
February, 2013
File:
PDF, 471 KB
english, 2013
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