Investigation of gate-bias stress and hot-carrier stress-induced instability of InGaZnO thin-film transistors under different environments
Hsieh, Tien-Yu, Chang, Ting-Chang, Chen, Te-Chih, Tsai, Ming-Yen, Chen, Yu-Te, Jian, Fu-Yen, Lin, Chia-Sheng, Tsai, Wu-Wei, Chiang, Wen-Jen, Yan, Jing-YiVolume:
231
Language:
english
Journal:
Surface and Coatings Technology
DOI:
10.1016/j.surfcoat.2012.10.030
Date:
September, 2013
File:
PDF, 1.18 MB
english, 2013