Precipitates caused by prolonged high-temperature annealing...

Materials Science in Semiconductor Processing 2013 / 6 Vol. 16; Iss. 3

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

Nakazawa, Haruo, Ogino, Masaaki, Teranishi, Hideaki, Takahashi, Yoshikazu, Habuka, Hitoshi
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Volume:
16
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2013.01.020
Date:
June, 2013
File:
PDF, 810 KB
english, 2013
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