Raman investigation of GaP–Si interfaces grown by molecular...

Thin Solid Films 2013 / 08 Vol. 541

Raman investigation of GaP–Si interfaces grown by molecular beam epitaxy

Bondi, A., Cornet, C., Boyer, S., Nguyen Thanh, T., Létoublon, A., Pedesseau, L., Durand, O., Moreac, A., Ponchet, A., Le Corre, A., Even, J.
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Volume:
541
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2012.11.132
Date:
August, 2013
File:
PDF, 599 KB
english, 2013
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