Schottky Barrier Height reduction using strained...

Microelectronic Engineering 2012 / 10 Vol. 98

Schottky Barrier Height reduction using strained silicon-on-insulator and dopant segregation

Ravaux, Florent, Dubois, Emmanuel, Chen, Zhenkun
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Volume:
98
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2012.05.045
Date:
October, 2012
File:
PDF, 462 KB
english, 2012
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