Reverse annealing behaviour and shallow p+n junction...

Vacuum 1989 Vol. 39; Iss. 2-4

Reverse annealing behaviour and shallow p+n junction characteristics of BF2+ implanted silicon

Liu Jialu, Zhang Tingqing, Yang Xiaoyue
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Volume:
39
Year:
1989
Language:
english
Pages:
2
DOI:
10.1016/0042-207x(89)90201-7
File:
PDF, 204 KB
english, 1989
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