Formation of TiSi2 and shallow junction by As+ ion beam...

Vacuum 1989 Vol. 39; Iss. 2-4

Formation of TiSi2 and shallow junction by As+ ion beam mixing and infrared rapid heat treatment

Ye Min, Lin Huiwang, Fei Guifu, Tsien Peihsin, Zhang Jingping, Yin Shiduan
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Volume:
39
Year:
1989
Language:
english
Pages:
3
DOI:
10.1016/0042-207x(89)90205-4
File:
PDF, 318 KB
english, 1989
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