AES depth profiling of TaSi multilayers: dependence of depth resolution on Ar+ ion energy and incidence angle: S Hofmann, Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestr 92, 7000 Stuttgart 1, FRG and W Hösler and R von Criegern, Siemens AG, ZFE F1 FKE 4, Otto-Hahn-Ring 6, D-8000 München, FRG

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