Rutherford backscattering and channelling studies of buried...

Rutherford backscattering and channelling studies of buried nitride structures directly produced by high intensity ion implantation of nitrogen into silicon

RA Yankov, RV Gribkovskii, FF Komarov
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Volume:
45
Year:
1994
Language:
english
Pages:
4
DOI:
10.1016/0042-207x(94)90337-9
File:
PDF, 376 KB
english, 1994
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