B-doped Si(001)2 × 1 gas-source molecular-beam epitaxy from...

Vacuum 1995 Vol. 46; Iss. 8-10

B-doped Si(001)2 × 1 gas-source molecular-beam epitaxy from Si2H6 and B2H6

TR Bramblett, Q Lu, T Karasawa, M-A Hasan, SK Jo, JE Greene
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Volume:
46
Year:
1995
Language:
english
Pages:
4
DOI:
10.1016/0042-207x(95)00070-4
File:
PDF, 521 KB
english, 1995
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