Effects of Ti addition and annealing on high-k Gd2O3...

Effects of Ti addition and annealing on high-k Gd2O3 sensing membranes on polycrystalline silicon for extended-gate field-effect transistor applications

Kao, Chyuan Haur, Chen, Hsiang, Huang, Chuan-Yu
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Volume:
286
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2013.09.080
Date:
December, 2013
File:
PDF, 1.95 MB
english, 2013
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