Passivation of interface traps in MOS-devices on n- and...

Passivation of interface traps in MOS-devices on n- and p-type 6H-SiC

Stein von Kamienski, E.G., Leonhard, C., Scharnholz, S., Gölz, A., Kurz, H.
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Volume:
6
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/S0925-9635(97)00049-6
Date:
August, 1997
File:
PDF, 452 KB
english, 1997
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