Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy
Melnik, Yu.V., Nikitina, I.P., Nikolaev, A.E., Dmitriev, V.A.Volume:
6
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/S0925-9635(97)00114-3
Date:
August, 1997
File:
PDF, 1.13 MB
english, 1997