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Temperature dependence of electrical properties of 6H-SiC buried gate JFET
Raynaud, C., Richier, C., Guillot, G.Volume:
6
Language:
english
Journal:
Diamond and Related Materials
DOI:
10.1016/S0925-9635(97)00113-1
Date:
August, 1997
File:
PDF, 428 KB
english, 1997