GaAs tunnel junction grown using tellurium and magnesium as...

Japanese Journal of Applied Physics 2014 / 02 Vol. 53; Iss. 2

GaAs tunnel junction grown using tellurium and magnesium as dopants by solid-state molecular beam epitaxy

Gan, Xingyuan, Zheng, Xinhe, Wu, Yuanyuan, Lu, Shulong, Yang, Hui, Arimochi, Masayuki, Watanabe, Tomomasa, Ikeda, Masao, Nomachi, Ichiro, Yoshida, Hiroshi, Uchida, Shiro
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.021201
Date:
February, 2014
File:
PDF, 742 KB
english, 2014
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