High-Quality Single Crystalline Ge(111) Growth on Si(111)...

Chinese Physics Letters 2012 / 03 Vol. 29; Iss. 3

High-Quality Single Crystalline Ge(111) Growth on Si(111) Substrates by Solid Phase Epitaxy

Sun, Bing, Chang, Hu-Dong, Lu, Li, Liu, Hong-Gang, Wu, De-Xin
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Volume:
29
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/29/3/036102
Date:
March, 2012
File:
PDF, 651 KB
english, 2012
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