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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation
Chen, Yang Yin, Degraeve, Robin, Clima, Sergiu, Govoreanu, Bogdan, Goux, Ludovic, Fantini, Andrea, Kar, Gouri Sankar, Pourtois, Geoffrey, Groeseneken, Guido, Wouters, Dirk J., Jurczak, MalgorzataYear:
2012
Language:
english
DOI:
10.1109/IEDM.2012.6479079
File:
PDF, 2.06 MB
english, 2012