Structural and electronic properties of narrow-band-gap semiconductors: InP, InAs, and InSb
Massidda, S., Continenza, A., Freeman, A. J., de Pascale, T. M., Meloni, F., Serra, M.Volume:
41
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.41.12079
Date:
June, 1990
File:
PDF, 342 KB
english, 1990