Structural characterization of GaAs grown at low...

Journal of Physics D Applied Physics 1995 / 04 Vol. 28; Iss. 4A

Structural characterization of GaAs grown at low temperatures by molecular beam epitaxy

Matyi, R J, Melloch, M R, Zhang, K, Miller, D L
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Volume:
28
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/28/4A/027
Date:
April, 1995
File:
PDF, 365 KB
english, 1995
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