Demonstration of AlGaN/GaN High-Electron-Mobility...

Applied Physics Express 2012 / 8 Vol. 5; Iss. 9

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, Manvi, Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth. E., Ing, Ng Geok
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Volume:
5
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.5.091003
Date:
August, 2012
File:
PDF, 1.79 MB
english, 2012
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