Metal-Gate/High-$\kappa$/Ge nMOS at Small CET With Higher...

IEEE Electron Device Letters 2013 / 02 Vol. 34; Iss. 2

Metal-Gate/High-$\kappa$/Ge nMOS at Small CET With Higher Mobility Than $\hbox{SiO}_{2}/\hbox{Si}$ at Wide Range Carrier Densities

Liao, C. C., Ku, T. C., Lin, M. H., Zeng, Lang, Kang, Jinfeng, Liu, Xiaoyan, Chin, Albert
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2012.2230241
Date:
February, 2013
File:
PDF, 484 KB
english, 2013
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