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Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
L. Donetti, F. Gámiz, S. Thomas, T. E. Whall, D. R. Leadley, P. Hellström, G. Malm, M. ÖstlingVolume:
110
Year:
2011
Language:
english
DOI:
10.1063/1.3639281
File:
PDF, 2.08 MB
english, 2011