Tensile strained Ge tunnel field-effect transistors: k · p...

Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

Kao, Kuo-Hsing, Verhulst, Anne S., Van de Put, Maarten, Vandenberghe, William G., Soree, Bart, Magnus, Wim, De Meyer, Kristin
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Volume:
115
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4862806
Date:
January, 2014
File:
PDF, 2.36 MB
english, 2014
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