Low-Temperature Formation of Silicon Nitride Film by Direct...

Japanese Journal of Applied Physics 1999 / 4 Vol. 38; Iss. Part 1, No

Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment

Saito, Yuji, Sekine, Katsuyuki, Hirayama, Masaki, Ohmi, Tadahiro
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.2329
Date:
April, 1999
File:
PDF, 195 KB
english, 1999
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