12.88 W/mm GaN High Electron Mobility Transistor on Silicon...

Applied Physics Express 2009 / 6 Vol. 2

12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

Hoshi, Shinichi, Itoh, Masanori, Marui, Toshiharu, Okita, Hideyuki, Morino, Yoshiaki, Tamai, Isao, Toda, Fumihiko, Seki, Shohei, Egawa, Takashi
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Volume:
2
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.2.061001
Date:
June, 2009
File:
PDF, 116 KB
english, 2009
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