Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region
Hu, Jie, Lenci, Silvia, Stoffels, Steve, Jaeger, Brice De, Groeseneken, Guido, Decoutere, StefaanVolume:
11
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201300472
Date:
February, 2014
File:
PDF, 333 KB
english, 2014