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Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film
Yi, Mingdong, Cao, Yong, Ling, Haifeng, Du, Zhuzhu, Wang, Laiyuan, Yang, Tao, Fan, Quli, Xie, Linghai, Huang, WeiVolume:
25
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/25/18/185202
Date:
May, 2014
File:
PDF, 1.27 MB
english, 2014