[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - LPT(II)-CSTBT™(III) for High Voltage application with ultra robust turn-off capability utilizing novel edge termination design
Ze Chen,, Nakamura, Katsumi, Terashima, TomohideYear:
2012
Language:
english
DOI:
10.1109/ISPSD.2012.6229014
File:
PDF, 2.17 MB
english, 2012