Analytical Drain Current Model for Poly-Si Thin-Film...

IEEE Transactions on Electron Devices 2013 / 03 Vol. 60; Iss. 3

Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary

Wang, Lisa L., Kuo, James B., Zhang, Shengdong
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2236332
Date:
March, 2013
File:
PDF, 609 KB
english, 2013
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