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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability
Horio, Masafumi, Iizuka, Yuji, Ikeda, Yoshinari, Mochizuki, Eiji, Takahashi, YoshikazuYear:
2012
Language:
english
DOI:
10.1109/ISPSD.2012.6229028
File:
PDF, 921 KB
english, 2012