Turnover Temperature Point in Extensional-Mode Highly Doped...

IEEE Transactions on Electron Devices 2013 / 03 Vol. 60; Iss. 3

Turnover Temperature Point in Extensional-Mode Highly Doped Silicon Microresonators

Shahmohammadi, Mohsen, Harrington, Brandon P., Abdolvand, Reza
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2243451
Date:
March, 2013
File:
PDF, 1.87 MB
english, 2013
Conversion to is in progress
Conversion to is failed