![](/img/cover-not-exists.png)
[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - A 90 to 170V scalable P-LDMOS with accompanied high voltage PJFET
Ellis-Monaghan, John, Shi, Yun, Sharma, Santosh, Feilchenfeld, Natalie, Letavic, Ted, Phelps, Rick, Hedges, Crystal, Cook, Don, Dunn, JimYear:
2012
Language:
english
DOI:
10.1109/ISPSD.2012.6229040
File:
PDF, 1.20 MB
english, 2012