[IEEE 2012 24th International Symposium on Power...

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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Making a bridge from SJ-MOSFET to IGBT via RC-IGBT structure Concept for 600V class SJ-RC-IGBT in a single chip solution

Minato, Tadaharu, Aono, Shinji, Uryu, Katsumi, Yamaguchi, Takashi
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Year:
2012
Language:
english
DOI:
10.1109/ISPSD.2012.6229042
File:
PDF, 732 KB
english, 2012
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