Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) ${\rm p}^{+}/{\rm n}$ and ${\rm n}^{+}/{\rm p}$ Heterojunctions Formed on Si Substrate
Chen, Che-Wei, Chung, Cheng-Ting, Tzeng, Ju-Yuan, Li, Pin-Hui, Chang, Pang-Sheng, Chien, Chao-Hsin, Luo, Guang-LiVolume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2247766
Date:
April, 2013
File:
PDF, 1008 KB
english, 2013