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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Scaling rule for very shallow trench IGBT toward CMOS process compatibility
Tanaka, Masahiro, Omura, IchiroYear:
2012
Language:
english
DOI:
10.1109/ISPSD.2012.6229052
File:
PDF, 798 KB
english, 2012