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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Scattering parameter approach to power MOSFET design for EMI
Tsukuda, Masanori, Kawakami, Keiichiro, Omura, IchiroYear:
2012
Language:
english
DOI:
10.1109/ISPSD.2012.6229053
File:
PDF, 987 KB
english, 2012