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[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Hot-carrier behaviour and ron-BV trade-off optimization for p-channel LDMOS transistors in a 180 nm HV-CMOS technology
Park, Jong Mun, Knaipp, Martin, Enichlmair, Hubert, Minixhofer, Rainer, Shi, Yun, Feilchenfeld, NatalieYear:
2012
Language:
english
DOI:
10.1109/ISPSD.2012.6229055
File:
PDF, 1.20 MB
english, 2012