[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Large area 4H-SiC power MOSFETs
Agarwal, A., Sei-Hyung Ryu,, Das, M., Lipkin, L., Palmour, J., Saks, N.Year:
2001
Language:
english
DOI:
10.1109/ISPSD.2001.934585
File:
PDF, 467 KB
english, 2001