[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Great impact of RFC technology on fast recovery diode towards 600 V for low loss and high dynamic ruggedness
Masuoka, Fumihito, Nakamura, Katsumi, Nishii, Akito, Terashima, TomohideYear:
2012
Language:
english
DOI:
10.1109/ISPSD.2012.6229099
File:
PDF, 1.25 MB
english, 2012