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[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - A balanced High Voltage IGBT design with ultra dynamic ruggedness and area-efficient edge termination
Ze Chen,, Nakamura, Katsumi, Nishii, Akito, Terashima, Tomohide, Kawakami, TsuyoshiYear:
2013
Language:
english
DOI:
10.1109/ISPSD.2013.6694393
File:
PDF, 1.53 MB
english, 2013