A 2D closed form model for the electrostatics in...

Microelectronics Journal 2014 / 09 Vol. 45; Iss. 9

A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current

Graef, Michael, Holtij, Thomas, Hain, Franziska, Kloes, Alexander, Iñíguez, Benjamín
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Volume:
45
Language:
english
Journal:
Microelectronics Journal
DOI:
10.1016/j.mejo.2014.04.033
Date:
September, 2014
File:
PDF, 1.89 MB
english, 2014
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