A model of trap-assisted tunneling in GaN/AlGaN/GaN...

Applied Surface Science 2014 / 09 Vol. 312

A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times

Racko, Juraj, Benko, Peter, Hotový, Ivan, Harmatha, Ladislav, Mikolášek, Miroslav, Granzner, Ralf, Kittler, Mario, Schwierz, Frank, Breza, Juraj
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Volume:
312
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2014.05.065
Date:
September, 2014
File:
PDF, 887 KB
english, 2014
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