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High Mobility WSe 2 p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Chuang, Hsun-Jen, Tan, Xuebin, Ghimire, Nirmal Jeevi, Perera, Meeghage Madusanka, Chamlagain, Bhim, Cheng, Mark Ming-Cheng, Yan, Jiaqiang, Mandrus, David, Tománek, David, Zhou, ZhixianVolume:
14
Language:
english
Journal:
Nano Letters
DOI:
10.1021/nl501275p
Date:
June, 2014
File:
PDF, 1.86 MB
english, 2014