InP-DHBT-on-BiCMOS Technology With $f_{T}/f_{\max}$ of...

IEEE Transactions on Electron Devices 2013 / 07 Vol. 60; Iss. 7

InP-DHBT-on-BiCMOS Technology With $f_{T}/f_{\max}$ of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources

Kraemer, Tomas, Ostermay, Ina, Jensen, Thomas, Johansen, Tom Keinicke, Schmueckle, Franz-Josef, Thies, Andreas, Krozer, Viktor, Heinrich, Wolfgang, Krueger, Olaf, Traenkle, Guenther, Lisker, Marco, Tr
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2264141
Date:
July, 2013
File:
PDF, 2.41 MB
english, 2013
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