Temperature Dependence and Postirradiation Annealing Response of the $1/f$ Noise of 4H-SiC MOSFETs
Zhang, Cher Xuan, Shen, Xiao, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Francis, Sarah Ashley, Roy, Tania, Dhar, Sarit, Ryu, Sei-Hyung, Pantelides, Sokrates T.Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2263426
Date:
July, 2013
File:
PDF, 1.29 MB
english, 2013