High-quality Ge/Si 0.4 Ge...

Journal of Physics D Applied Physics 2011 / 02 Vol. 44; Iss. 5

High-quality Ge/Si 0.4 Ge 0.6 multiple quantum wells for photonic applications: growth by reduced pressure chemical vapour deposition and structural characteristics

Liu, Xue-Chao, Myronov, M, Dobbie, A, Morris, R J H, Leadley, D R
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Volume:
44
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/44/5/055102
Date:
February, 2011
File:
PDF, 1.08 MB
english, 2011
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