Etching and Surface Modification of GaAs by Hydrogen...

Japanese Journal of Applied Physics 1996 / 4 Vol. 35; Iss. Part 2, No

Etching and Surface Modification of GaAs by Hydrogen Radicals Generated by Hydrogen Microwave Afterglow Method

Nagayoshi, Hiroshi, Yamamoto, Yuichi, Kamisako, Koichi
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Volume:
35
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.L451
Date:
April, 1996
File:
PDF, 813 KB
1996
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