SEGR and SEB in n-channel power MOSFETs

IEEE Transactions on Nuclear Science 1996 / Dec. Vol. 43; Iss. 6

SEGR and SEB in n-channel power MOSFETs

Allenspach, M., Dachs, C., Johnson, G.H., Schrimpf, R.D., Lorfevre, E., Palau, J.M., Brews, J.R., Galloway, K.F., Titus, J.L., Wheatley, C.F.
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Volume:
43
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.556887
Date:
January, 1996
File:
PDF, 681 KB
english, 1996
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