Tristate Memory Using Ferroelectric–Insulator–Semiconductor...

Advanced Functional Materials 2011 Vol. 21; Iss. 22

Tristate Memory Using Ferroelectric–Insulator–Semiconductor Heterojunctions for 50% Increased Data Storage

Min Hyuk Park, Hyun Ju Lee, Gun Hwan Kim, Yu Jin Kim, Jeong Hwan Kim, Jong Ho Lee, Cheol Seong Hwang
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Volume:
21
Year:
2011
Language:
english
Pages:
9
DOI:
10.1002/adfm.201101073
File:
PDF, 851 KB
english, 2011
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