Structure of GaAs heteroepitaxial layer grown on GaP(001) by molecular beam epitaxy
Takashi Nomura, Kenji Murakami, Kenji Ishikawa, Masahiro Miyao, Tsuyoshi Yamaguchi, Akira Sasaki, Minoru HaginoVolume:
242
Year:
1991
Language:
english
Pages:
1
DOI:
10.1016/0167-2584(91)90442-t
File:
PDF, 72 KB
english, 1991